Physics & Astronomy

Weitering, Hanno

Weitering, Hanno

Faculty

Hanno Weitering

Chancellor's Professor | Experimental Condensed Matter Physics

Brief Vita

  • Head, Department of Physics and Astronomy, The University of Tennessee (2012-2022)
  • Deputy Director, UTK/ORNL Joint Institute for Advanced Materials (2009-2019)
  • Professor of Physics, The University of Tennessee-Knoxville (2001-Present)
  • Joint Faculty Professor, Oak Ridge National Laboratory (2001-2017)
  • Professor of Applied Physics, Delft University of Technology (2000-2001)
  • Associate Professor of Physics, The University of Tennessee (1999-2000)
  • Guest Scientist, Oak Ridge National Laboratory (1999-2000)
  • Assistant Professor of Physics, The University of Tennessee (1993-1999)
  • Guest Scientist, Oak Ridge National Laboratory (1993-1999)
  • Benjamin Franklin Postdoctoral Fellowship, University of Pennsylvania (1991-1993)
  • PhD Inorganic solid state chemistry University of Groningen, Netherlands, (1991)

Selected Honors and Awards

Highlights

Research and Student Mentoring

I work in the area of experimental condensed matter physics, with special emphasis on the structure and electronic properties of surfaces, interfaces, epitaxial nanostructures and ultrathin film materials. My interests include correlated electron phenomena and electronic instabilities at surfaces, low-dimensional superconductivity, dilute magnetic semiconductors, and oxide heterostructures. Experimental techniques include molecular beam epitaxy, scanning probe microscopy, electron energy-loss spectroscopy, photoemission, as well as ex-situ transport and magnetic measurements via SQUID magnetometry. Most recently, I have focused on doping studies of triangular, honeycomb, and kagome lattices on silicon surfaces, and on interface-enhanced superconductivity in 2D materials.

I published over 110 original research papers in mainstream physics journals with about 5000 citations (h=39 in WoS). I have supervised or co-supervised 15 PhD students and 13 postdocs, and enjoy(ed) research funding from the National Science Foundation, Department of Energy, and the Office of Naval research.

Selected Publications Over the Years

  1. “Evidence of chiral superconductivity on a silicon surface,” F. Ming, X. Wu, C. Chen, K. D. Wang, P. Mai, T. A. Maier, J. Strockoz, J. W. F. Venderbos, C. Gonzalez, J. Ortega, S. Johnston, and H. H. Weitering, Nature Phys. (2023).
  2. “Superconductivity in a hole-doped Mott-insulating triangular adatom layer on a silicon surface,” X. Wu, F. Ming, T. S. Smith, G. Liu, Fei Ye, K. Wang, S. Johnston, and H. H. Weitering, Phys. Rev. Lett. 125, 117001 (2020).
  3. “Coupled sublattice melting and charge-order transition in two dimensions,” T.S. Smith, F. Ming, D. G. Trabada, C. Gonzalez, D. Soler-Polo, F. Flores, J. Ortega, and H.H. Weitering, Phys. Rev. Lett. 124, 097602 (2020).
  4. “Realization of a hole-doped Mott insulator on a triangular silicon lattice,” F. Ming, S. Johnston, D. Mulugeta, T.S. Smith, P. Vilmercati, G. Lee, T.A. Maier, P.C. Snijders, and H.H. Weitering, Phys. Rev. Lett. 119, 266802 (2017).
  5. “Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping,” F. Ming, D. Mulugeta, W. Tu, T.S. Smith, P. Vilmercati, G. Lee, Y.-T Huang, R.D. Diehl, P.C. Snijders, and H.H. Weitering, Nature Communications 8, 14721 (2017).
  6. “Itinerant antiferromagnetism in RuO2,” T. Berlijn, P.C. Snijders, O. Delaire, H.D. Zhou, T.A. Maier, H.B. Cao, S.-X. Shi, M. Matsuda, Y. Wang. M.R. Koehler, P.R.C. Kent, and H.H. Weitering, Phys. Rev. Lett. 118, 077201 (2017).
  7. “Origins of electronic band gap reduction in Cr/N co-doped TiO2,” C. Parks Cheney, P. Vilmercati, E.W. Martin, M. Chiodi, L. Gavioli, M. Regmi, G. Eres, T.A. Callcott, H.H. Weitering, and N. Mannella, Phys. Rev. Lett. 112, 036404 (2014).
  8. “Polaronic transport and current blockades in epitaxial silicide nanowires and nanowire arrays,” V. Iancu, X.-G. Zhang, T.-H. Kim, P.R.C. Kent, M.E. Woodson, J.M. Ramsey, A.-P. Li, and H.H. Weitering, Nano Letters 13, 3684-3689 (2013).
  9. “Electronic instabilities in self-assembled atom wires,” P.C. Snijders and H.H. Weitering, Rev. Mod. Phys. 82, 307-329 (2010).
  10. “Bandgap narrowing of titanium oxide semiconductors by non-compensated cation-anion codoping for enhanced visible-light photoactivity,” W.G. Zhu, X. Qiu, V. Iancu, X. Q. Chen, H. Pan, W. Wang, N.M. Dimitrijevic, T. Rajh, H.M. Meyer III, M.P. Paranthaman, G.M. Stocks, H.H. Weitering, B. Gu, G. Eres, and Z.Y. Zhang, Phys. Rev. Lett. 103, 226401 (2009).
  11. “Mechanism of the band gap opening across the order-disorder transition of Si(111)4×1-In,” C. Gonzalez, J.D. Guo, J. Ortega, F. Flores, and H.H. Weitering, Phys. Rev. Lett. 102, 115501 (2009).
  12. “Tuning the quantum stability and superconductivity of ultrathin metal alloys,” M.M. Özer, Yu Jia, Z.Y. Zhang, J.R. Thompson, and H.H. Weitering, Science 316, 1594 (2007).
  13. “Hard superconductivity of a soft metal in the quantum regime,” M.M. Özer, J.R. Thompson, and H.H. Weitering, Nature Physics 2, 173-176 (2006).
  14. “Linear magnetization dependence of the intrinsic anomalous Hall effect,” C. Zeng, Y. Yao, Q. Niu, and H.H. Weitering, Phys. Rev. Lett. 96, 037204 (2006).
  15. “Defect-mediated condensation of a charge density wave,” H.H. Weitering, J.M. Carpinelli, A.V. Melechko, J. Zhang, M. Bartkowiak, and E.W. Plummer, Science 285, p.2107-2110 (1999).
  16. “Theory of the “honeycomb chain-channel” reconstruction of Si(111)3×1,” S.C. Erwin, and H.H. Weitering, Phys. Rev. Lett. 81, p.2296-2299 (1998).
  17. “Mott insulating ground state on a triangular surface lattice,” H.H. Weitering, X. Shi, P.D. Johnson, J. Chen, N.J. DiNardo, and K. Kempa, Phys. Rev. Lett. 78, p.1331-1334 (1997).
  18. “Direct observation of a surface charge density wave,” J.M. Carpinelli, H.H. Weitering, E.W. Plummer, and R. Stumpf, Nature 381, p.398-400 (1996).
  19. “Atomic structure dependent Schottky barrier at epitaxial Pb/Si(111) interfaces,” D.R. Heslinga, H.H. Weitering, D.P. van der Werf, T.M. Klapwijk, and T. Hibma, Phys. Rev. Lett. 64, p.1589-1592 (1990).
Laboratory at the Institute for Advanced Materials and Manufacturing
Laboratory at the Institute for Advanced Materials and Manufacturing

Laboratory at the Institute for Advanced Materials and Manufacturing

Integrated system for oxide molecular beam epitaxy, low-temperature scanning probe microscopy, and (time-resolved) angle-resolved photoemission spectroscopy (with Prof. Norman Mannella); see also the Tennessee Quantum Center: Facilities.

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